Micron targets 42 Gb/mm2 for late 2027 NAND launch

Micron Technology expects to begin high-volume production of its G11 NAND flash in the second half of 2027. The company announced this timeline during an industry event held this week. The new generation is designed to deliver approximately twice the storage density of Micron's current G9 technology.

Specifically, the G11 chip is projected to reach 42 Gb/mm2 in triple-level-cell form. This compares to the roughly 21 Gb/mm2 density of the existing G9 generation. Micron stated that input/output speeds will increase by up to 50%, rising from 3,600 MT/s to 5,400 MT/s. Additionally, the energy required to transfer each bit should decrease by more than 25%.

A key technical shift in the G11 design is the use of wafer-on-wafer bonding. This method allows the company to manufacture the memory array and the peripheral circuitry on separate wafers. Each wafer is optimized for its specific function before the two are bonded together. Scott DeBoer, Micron's president and chief technology and products officer, confirmed the architecture at the event. He described G11 as the world's most advanced NAND.

The G11 platform will feature more than 400 layers. Micron has not disclosed the exact number of active wordline layers. However, the company stated that the design will maintain an industry-leading memory cell pitch. This suggests the density gain comes from a combination of increased layer count and smaller cell dimensions. The firm plans to release further technical specifications closer to the start of production in 2027.

These improvements target conventional solid-state drives for client and data center markets. They also address storage devices built for artificial intelligence workloads, which require higher bandwidth and better energy efficiency. The density of 42 Gb/mm2 is expected to exceed next-generation products from rivals Kioxia and Samsung.

DeBoer noted that the company adopted bonding technology when it became cost-effective and relevant to product specs. He said this timing is right for the technology. Micron is also developing high-mobility materials and denser cell architectures for future generations. These advancements aim to improve transistor characteristics and reduce internal data movement energy.

The company has not yet revealed specific targets for generations following G11. It expects to continue scaling in all three dimensions. DeBoer indicated that the focus remains on new materials and densifying cell architecture. Both the industry and Micron continue to prioritize adding layers and shrinking cell dimensions to meet strong demand for NAND-based storage.